Electronic devices with dielectric compositions and method for their manufacture

ABSTRACT

A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.

RELATED APPLICATION

This application is based on a common specification with concurrentlyfiled application Ser. No. 09/441,728 issued Aug. 22, 2000, now U.S.Pat. No. 6,107,357, titled “DIELECTRIC COMPOSITIONS AND METHOD FOR THEIRMANUFACTURE”.

TECHNICAL FIELD

This invention relates generally to dielectric materials and their usein electronic devices such as integrated circuits. More particularly,the invention pertains to novel dielectric materials of foamed polymersand associated methods of preparation. The novel dielectric materialsare particularly useful in the fabrication of electronic devices such asintegrated circuit devices and integrated circuit packaging devices.

BACKGROUND

As semiconductor devices are becoming smaller and on-chip device densityis correspondingly increasing, both signal delays due to capacitivecoupling and crosstalk between closely spaced metal lines areincreasing. These problems are exacerbated by the need to keep conductorlines as short as possible in order to minimize transmission delays,thus requiring multilevel wiring schemes for the chip. The problems havebeen ameliorated to some extent by the switch to copper metallurgy, butas feature sizes go below 0.25 μm, this alone will not provide asolution. The use of an insulator with a lower dielectric constant thanthe currently used SiO₂ (k=8.9−4.1) would also, clearly, improve thesituation. Current integration demands for insulators used with, forexample, Al(Cu) wiring, also require thermal stabilities in excess of450° C., good mechanical properties, resistance to crack generation andpropagation, low defect densities, low water uptake, chemicalresistance, processability by photolithographic techniques and gas phaseetching procedures, and capacity for planarization.

Accordingly, considerable attention has focused on the replacement ofsilicon dioxide with new materials, particularly materials having lowerdielectric constants, since both capacitive delays and power consumptiondepend on the dielectric constant of the insulator. This is not a simplematter given the complexities and demands of current semiconductorintegration processes. Of the existing materials with demonstratedultra-low dielectric constants, the highly fluorinated materials (e.g.,Teflon) have the longest history. For example, attempts have been madeto reduce the dielectric constant of polyimides by incorporatingperfluoroalkyl-containing comonomers into the polymer structure (see,e.g., Haidar et al. (1991) Mater. Res. Soc. Symp. Proc. 227:35;Critchlen et al. (1972) J. Polym. Sci. A-l 10:1789; and Harris et al.(1991) Mater. Res. Soc. Symp. Proc. 227:3). The synthesis of polyimidesbased on 9,9-disubstituted xanthene dianhydrides, e.g., 6FXDA/6FDA(9,9-bis(trifluoromethoxy)xanthenetetracarboxylicdianhydride/2,2-bis(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropane), aswell as polyimides based on the TFMOB monomer(2,2′-bis(trifluoromethyl)benzidine), has been reported. See Muraka(March 1996) Solid State Tech 83 and Jang et al. (1994) Mater. Res. Soc.Symp. Proc. 337:25. Although these alkane polymers have the lowestdielectric constants of any homogeneous polymers, there are manyliabilities. Current integration requirements call for exceptionalthermal stability at temperatures in the range of 400-450° C. Thistemperature region is a problem for most organic polymers, andparticularly for fluorocarbons. Also, adhesion of fluorinated materials(self-adhesion, adhesion to metals, dielectrics, ceramics, etc.) is aproblem without some prior surface pretreatment. Further, the stabilityof fluorinated materials with metallurgy at elevated temperatures isproblematic. The mechanical properties of known fluorinated materialsare not ideal; they usually have large thermal expansion coefficientsand are intrinsically soft materials. The latter creates a problem forchemical mechanical polishing (CMP) procedures. Finally, the methodologyto develop other highly fluorinated materials such as fluorinatedpolyimides is limited by synthetic difficulties associated with theincorporation of a substantial number of pendant perfluoroalkyl groups.

Attempts have been made to reduce the dielectric constant of suchmaterials through the introduction of kinks and conjugation-interruptinglinkages in the polymer backbone to lower molecular polarizability andreduce chain-chain interactions (St. Clair et al. (1988) Proc. Amer.Chem. Soc. Div. Polym. Mater. Sci. Eng. 59:28). A more viable approach,however, has been controlled introduction of porosity into existing lowdielectric constant materials.

Generation of porous polymer foams substantially reduces the dielectricconstant of the material while maintaining the desired thermal andmechanical properties of the base (or “host”) polymer. The reduction indielectric constant is achieved by incorporating air voids, as air has adielectric constant of 1. The advantage of a foam approach isillustrated in Hedrick et al. (1995) Polymer 36:2685, which illustratesin graph form a Maxwell-Garnett model of composite structures based on amatrix polymer having an initial dielectric constant of 2.8.Incorporation of a second phase of dielectric constant 1.0, as with theintroduction of air-filled pores in a foam, causes a dramatic reductionin the dielectric constant. However, foams provide a unique set ofproblems for dielectric applications. The pore size must be much smallerthan both the film thickness and any microelectronic device features. Inaddition, it is desired that the pores be closed cell, i.e. theconnectivity between the pores must be minimal to prevent the diffusionof reactive contaminants. Finally, the volume fraction of the voids mustbe as high as possible to achieve the lowest possible dielectricconstant. All of these features can alter the mechanical properties ofthe film and affect the structural stability of the foam.

An approach that has been developed for preparing a dielectric polymerfoam with pore sizes in the nanometer regime involves the use of blockcopolymers composed of a high temperature, high T_(g) polymer and asecond component which can undergo clean thermal decomposition with theevolution of gaseous by-products to form a closed-cell, porousstructure. See, e.g., Hedrick et al. (1993) Polymer 34:4717, and Hedricket al. (1995) Polymer 36:4855. The process involves use of blockcopolymers that can undergo thermodynamically controlled phaseseparation to provide a matrix with a dispersed phase that is roughlyspherical in morphology, monodisperse in size and discontinuous. Byusing as a host or matrix material a thermally stable polymer of lowdielectric constant and, as the dispersed phase, a labile polymer thatundergoes thermolysis at a temperature below the T_(g) of the matrix toyield volatile reaction products, one can prepare foams with pores inthe nanometer dimensional regime that have no percolation pathway; theyare closed structures with nanometer size pores that contain air.

While the method has proved to be somewhat useful, the inventors hereinhave found formation of porous structures to be problematic in severalrespects. That is, although the concept was demonstrated in principle(see Hedrick et al. (1993); and Hedrick et al. (1995)), processing wascomplicated by synthetic difficulties and by the extremely smallprocessing window. Also the thermal stability of the foam product waslimited to about 350-375° C. (Hedrick et al. (1996) J. Polym. Sci.;Polym. Chem. 34, 2867). Furthermore, although dielectric constants of2.3-2.4 were achieved at porosity levels less than about 20% (seeHedrick et al. (1996)), the pore content could not be further increasedwithout comprising the small domain sizes and/or thenon-interconnectivity of the pore structure.

The present invention is addressed to the aforementioned need in theart, and provides a novel method for preparing low dielectric materialscomprised of foamed polymer structures with a significantly increasedprocessing window, wherein the structures contain non-interconnected,“closed cell” pores in the form of sharply defined domains at most 200 Åin diameter, wherein the structures have very low dielectric constants(on the order of 3.0 or less), are thermally stable at temperatures inexcess of 450° C., have good mechanical properties, are resistant tocrack generation and propagation, and are readily processable byphotolithographic techniques.

SUMMARY OF THE INVENTION

Accordingly, it is a primary object of the invention to address theabove-mentioned need in the art by providing novel dielectric materialsthat are useful, inter alia, in electronic devices.

It is another object of the invention to provide such dielectricmaterials that are useful in integrated circuit devices.

It is still another object of the invention to provide such dielectricmaterials in the form of a foam.

It is yet another object of the invention to provide methods formanufacturing the present dielectric materials.

It is an additional object of the invention to provide an integratedcircuit device in which metallic circuit lines on a substrate areelectrically insulated from each other by a dielectric material of theinvention.

Still a further object of the invention is to provide an integratedcircuit packaging device (multichip module) that incorporates adielectric material of the invention.

Additional objects, advantages and novel features of the invention willbe set forth in part in the description which follows, and in part willbecome apparent to those skilled in the art upon examination of thefollowing, or may be learned by practice of the invention.

The invention thus provides, in one embodiment, a novel dielectricmaterial comprised of a porous material having closed cell pores lessthan about 200 Å in diameter, preferably less than about 100 Å indiameter, a void percentage in the range of approximately 5% to 35%, anda dielectric constant of less than 3.0, wherein the polymeric materialcomprises a host polymer that has a pre-process molecular weight in therange of approximately 750 to 100,000, and is thermally stable attemperatures of at least about 400° C., preferably temperatures of atleast about 450° C. Such dielectric materials are prepared using thefollowing process steps: (a) admixing, in a suitable solvent, (i) athermally labile porogen having a reactive site that enables covalentattachment to another molecular moiety, (ii) a thermally stable, lowdielectric constant host polymer having a high glass transitiontemperature T_(g), and (iii) a coupling agent effective to covalentlybind to both the reactive site of the porogen and the host polymer; (b)heating the admixture to a temperature T_(C) effective to couple theporogen to the host polymer via the coupling agent, whereby a polymericmatrix is formed in which the porogen is present as a discrete phasewithin a continuous phase formed by the host polymer; and (c) heatingthe polymeric matrix to a temperature T_(D) effective to degrade theporogen without affecting the host polymer, leaving closed cell “pores”behind, wherein T_(C)<T_(D)<T_(g).

In another embodiment of the invention, an integrated circuit device isprovided that comprises: (a) a substrate; (b) individual metalliccircuit lines positioned on the substrate; and (c) a dielectriccomposition positioned over and/or between the individual metalliccircuit lines, the dielectric composition comprising the noveldielectric material of the invention.

Still an additional embodiment of the invention relates to an integratedcircuit packaging device providing signal and power current to anintegrated circuit chip, the packaging device comprising:

(i) a substrate having electrical conductor means for connection to acircuit board,

(ii) a plurality of alternating electrically insulating and conductinglayers positioned on the substrate wherein at least one of theelectrically insulating layers is comprised of a dielectric material asprovided herein; and

(iii) a plurality of vias for electrically interconnecting theelectrical conductor, the conducting layers and the integrated circuitchip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a portion of an integrated circuitdevice fabricated using the novel dielectric materials provided herein.

FIGS. 2-5 schematically illustrate a process for making an integratedcircuit device using the present dielectric materials.

FIGS. 6-8 schematically illustrate an alternative process for making anintegrated circuit device using the present dielectric materials.

DETAILED DESCRIPTION OF THE INVENTION

Overview and Definitions

Before describing the present invention in detail, it is to beunderstood that this invention is not limited to specific compositions,components or process steps, as such may vary. It is also to beunderstood that the terminology used herein is for the purpose ofdescribing particular embodiments only, and is not intended to belimiting.

It must be noted that, as used in this specification and the appendedclaims, the singular forms “a,” “and,” and “the” include pluralreferents unless the context clearly dictates otherwise. Thus, forexample, reference to “a porogen” includes mixtures of porogens, a “hostpolymer” includes mixtures of host polymers, “a solvent” includesmixtures of solvents, and the like.

In describing and claiming the present invention, the followingterminology will be used in accordance with the definitions set outbelow.

The term “alkyl” as used herein refers to a branched or unbranchedsaturated hydrocarbon group of 1 to approximately 24 carbon atoms, suchas methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl,octyl, decyl, tetradecyl, hexadecyl, eicosyl and tetracosyl, as well ascycloalkyl groups such as cyclopentyl and cyclohexyl. The term “loweralkyl” intends an alkyl group of 1 to 6 carbon atoms.

The term “alkylene” as used herein refers to a difunctional saturatedbranched or unbranched hydrocarbon chain containing from 1 toapproximately 24 carbon atoms, typically 1 to approximately 12 carbonatoms, and includes, for example, methylene (—CH₂—), ethylene(—CH₂—CH₂—), propylene (—CH₂—CH₂—CH₂—), 2-methylpropylene(—CH₂—CH(CH₃)—CH₂—), hexylene (—(CH₂)₆—), and the like. “Lower alkylene”refers to an alkylene group of 1 to 6, more preferably 1 to 4, carbonatoms.

The term “alkoxy” as used herein refers to a substituent —O—R wherein Ris alkyl as defined above. The term “lower alkoxy” refers to such agroup wherein R is lower alkyl, e.g., methoxy, ethoxy and the like.

The term “aryl” as used herein, and unless otherwise specified, refersto an aromatic moiety containing 1 to 5 aromatic rings. For aryl groupscontaining more than one aromatic ring, the rings may be fused orlinked. Aryl groups are optionally substituted with one or more inert,nonhydrogen substituents per ring; suitable “inert, nonhydrogen”substituents include, for example, halo, haloalkyl (preferablyhalo-substituted lower alkyl), alkyl (preferably lower alkyl), alkenyl(preferably lower alkenyl), alkynyl (preferably lower alkynyl), alkoxy(preferably lower alkoxy), alkoxycarbonyl (preferably loweralkoxycarbonyl), carboxy, nitro, cyano and sulfonyl. Unless otherwiseindicated, the term “aryl” is also intended to include heteroaromaticmoieties, i.e., aromatic heterocycles. Generally, although notnecessarily, the heteroatoms will be nitrogen, oxygen or sulfur.

The term “halo” is used in its conventional sense to refer to a chloro,bromo, fluoro or iodo substituent. In the reagents and materialsdescribed and claimed herein, halo substituents are generally fluoro orchloro. The terms “haloalkyl,” “haloaryl” (or “halogenated alkyl” or“halogenated aryl”) refer to an alkyl or aryl group, respectively, inwhich at least one of the hydrogen atoms in the group has been replacedwith a halogen atom.

The term “hydrocarbyl” is used in its conventional sense to refer to ahydrocarbon group containing carbon and hydrogen, and may be aliphatic,alicyclic or aromatic, or may contain a combination of aliphatic,alicyclic and/or aromatic moieties. The hydrocarbyl substituents hereingenerally contain 1 to 24 carbon atoms, more typically 1 to 12 carbonatoms, and may be substituted with various substituents and functionalgroups.

The term “polymer” is used to refer to a chemical compound thatcomprises linked monomers, and that may or may not be linear,crosslinked or thermosetting.

Process for Preparing the Novel Dielectric Material

In a first embodiment, the invention provides a process for preparing alow dielectric constant, foamed polymeric material having numerousadvantages. In contrast to prior processes, the present method enablesuse of higher molecular weight polymers and simplified procedures,resulting in a thermally and chemically stable porous material with ahigh void percentage, on the order of 5% to 35%, and a dielectricconstant less than 3.0, preferably less than 2.8, and most preferablyless than 2.5.

The process involves, at the outset, admixing (i) a thermally labileporogen having a reactive site that enables covalent attachment toanother molecular moiety, (ii) a thermally stable, low dielectricconstant host polymer, and (iii) a coupling or “crosslinking” agenteffective to covalently bind to both the reactive site of the porogenand the host polymer, in a suitable solvent. The admixture is heated toa crosslinking temperature T_(C) to bring about coupling of the porogento the host polymer via the coupling agent. This crosslinking reactionresults in formation of a polymeric matrix in which the porogen ispresent as a discrete phase within a continuous phase formed by the hostpolymer. After formation of the matrix, the porogen is thermallydegraded, leaving closed cell pores present throughout. This latter stepinvolves heating the polymeric matrix to a temperature T_(D) effectiveto degrade the porogen without affecting the host polymer, i.e., T_(D)is less than the glass transition temperature T_(g) of the host polymer.

1. The Host Polymer

As noted above, the present process allows use of high molecular weighthost polymers, i.e., host polymers having a pre-processing molecularweight of at least about 750, and preferably at least about 5,000.Generally, the host polymer will have a pre-processing molecular weightin the range of approximately 750 to 100,000. In addition, the hostpolymer should have, after curing, a high glass transition temperatureT_(g) , i.e., a T_(g) of at least about 400° C., most preferably atleast about 450° C.

The host polymer is typically although not necessarily asilicon-containing polymer, preferably organic polysilica. Organicpolysilica is a polymeric compound comprising silicon, carbon, oxygenand hydrogen atoms. Suitable organic polysilica include (i)silsesquioxanes, (ii) alkoxy silanes, preferably partially condensedalkoxysilanes (e.g., partially condensed by controlled hydrolysis oftetraethoxysilane having an Mn of about 500 to 20,000), (iii)organically modified silicates having the composition RSiO₃ and R₂SiO₂wherein R is an organic substituent, and (iv) orthosilicates, preferablypartially condensed orthosilicates having the composition SiOR₄.Silsesquioxanes are polymeric silicate materials of the type(RSiO_(1.5))_(n) where R is an organic substituent.

Suitable organic polysilica for use in the present invention are knownto those skilled in the art. Preferably, the organic polysilica is asilsesquioxane. Suitable silsesquioxanes for the present inventioninclude, but are not limited to, hydrogen silsesquioxanes, alkyl(preferably lower alkyl, e.g., methyl) silsesquioxanes, aryl (e.g.,phenyl) or alkyl/aryl silsesquioxanes, and copolymers of silsesquioxanes(e.g., copolymers of polyimides and silsesquioxanes), all of which arecommercially available (e.g., GR950 from Techniglass, Perrysburg, Ohio).Other suitable silsesquioxanes will be known to those skilled in the artand are disclosed in the pertinent texts, patent documents andliterature references; see, e.g., U.S. Pat. No. 5,384,376, and Chem.Rev. 95:1409-1430 (1995).

Other suitable host polymers include without limitation high temperaturepolymers and thermosetting network resins such as polyimide,polybenzocyclobutene, and polyarylenes such as polyphenylenes,poly(phenylquinoxalines) and poly(arylene ethers). Polyimides, as knownin the art, are formed by imidization of a poly(amic acid) or poly(amicacid ester), preferably a poly(amic acid ester), which is in turnsynthesized from a diamine and a diester diacyl halide comprising thereaction product of a tetracarboxylic dianhydride and a lower alkanol.Suitable dianhydrides for preparing poly(amic acid esters) that can beimidized to give polyimides useful herein include, but are not limitedto, the following: pyromellitic dianhydride (PMDA); benzophenonedianhydride (BPDA); 2,2-bis(3,4-dicarboxyphenyl) propane dianhydride;3,3′,4,4′-biphenyl-tetracarboxylic acid dianhydride,bis(3,4-dicarboxyphenyl) ether dianhydride; bis(3,4-dicarboxy-phenyl)thioether dianhydride; bisphenol-A bisether dianhydride;2,2-bis(3,4-dicarboxylphenyl)-hexafluoropropane dianhydride;2,3,6,7-naphthalenetetracarboxylic acid dianhydride;bis(3,4-dicarboxyphenyl) sulfone dianhydride; 1,2,5,6-naphthalenetetracarboxylic dianhydride; 2,2′,3,3′-biphenyl tetracarboxylicdianhydride; 9,9-bis-(trifluoromethyl) xanthenetetracarboxylicdianhydride (6FXDA); 9-trifluoromethyl-9-phenyl xanthenetetracarboxylicdianhydride; 3,4,3′,4′-benzophenone tetracarboxylic dianhydride; andterphenyldianhydride. Correspondingly, suitable diamines for preparingpoly(amic acid ester) precursors that can be imidized for use hereininclude without limitation: p-phenylene diamine (PDA);4,4′-diamino-diphenylamine; benzidine; 4,4′-diamino-diphenyl ether(ODA); 1,5-diamino-naphthalene; 3,3′-dimethyl-4,4′diamino-biphenyl;3,3′-dimethoxybenzidine; 1,4-bis(p-aminophenoxy) benzene;1,3-bis(p-aminophenoxy) benzene; 2,2-bis[4-aminophenyl]hexafluoropropane(6FDA); 1,1-bis (4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane (3FDA);and 9,9-bis (4-aminophenyl) fluorene (FDA). Particularly preferredpolyimides for use herein are formed by imidization of a poly(amic acidester) formed from a dianhydride selected from the group consisting ofPMDA, BPDA and 6FXDA and a diamine selected from the group consisting ofPDA, ODA and 6FDAM. Examples of such preferred structures are asfollows:

“PMDA/3FDA” Polyimide

“PMDA/ODA” Polyimide

“6FXDA/6FDA” Polyimide

2. The Porogen

The porogen is a thermally degradable material which, upon heating tothe material's decomposition temperature T_(D), decomposesquantitatively into non-reactive species that can readily diffusethrough the host polymer matrix. The temperature at which decompositionoccurs should be sufficiently high to permit standard film preparationand solvent removal yet below the T_(g) of the host polymer to avoidcollapse of the foam matrix. Porogens thus have a decompositiontemperature T_(D) that is at least about 250° C., preferably 300° C.

Suitable porogens are generally decomposable polymers, including notonly linear, branched and crosslinked polymers and copolymers, but alsocrosslinked polymeric nanoparticles with reactive surface functionality.Linear polymers are preferred, and vinyl-based polymers and polyethersare most preferred. Optimally, the porogen is a polymer comprised ofmonomer units selected from the group consisting of styrene, halogenatedstyrene, hydroxy-substituted styrene, lower alkyl-substituted styrene,acrylic acid, acrylamide, methacrylic acid, methyl acrylate, ethylacrylate, butyl acrylate, ethylene oxide, propylene oxide, andcombinations thereof, with poly(methyl methacrylate) (PMMA), polystyreneand poly(α-methyl styrene) preferred. Additional polymers that may serveas the porogen herein include, but are not limited to: aliphaticpolycarbonates such as poly(propylene carbonate) and poly(ethylenecarbonate); polyesters; polysulfones; polylactides; polylactones. Theporogen may be a homopolymer, or it may be a copolymer comprised of anyof the foregoing monomeric materials, e.g., poly(styrene-co-α-methylstyrene), poly(styrene-ethylene oxide), poly(ether-lactones),poly(ester-carbonates), and poly(lactone-lactides).

In order to couple the porogen to the host polymer, the porogen musthave at least one reactive site capable of reacting with the couplingagent. The reaction may involve nucleophilic substitution, electrophilicsubstitution, free radical substitution, Diels Alder reactions,elimination, or any other mechanism capable of resulting in theformation of a new covalent bond. When the coupling reaction involvesnucleophilic substitution, the porogen may be functionalized so as tocontain a reactive site comprised of a nucleophilic moiety, e.g., —OH,—NH₂ or the like; alternatively, the porogen may be functionalized so asto contain a reactive site capable of reaction with such a nucleophilicmoiety. Introduction of reactive sites can be carried out usingconventional methods, known to those skilled in the art and/or describedin the pertinent literature. For example, monohydroxyl-terminatedporogen polymers may be prepared by anionic, ring opening, or grouptransfer polymerization methods; if desired, the hydroxyl terminus maythen be converted to an amino end group, e.g., by reaction with4-nitrophenyl chloroformate, followed by catalytic hydrogenation to thedesired amine. See Hedrick et al. (1993) Polymer 34:4717; and Hedrick etal. (1995) Polymer 36:4855. Alternatively, a reactive site can beintroduced in free radical processes through the use of a “masked” orprotected initiator. For example, an amino-functionalized polystyrenecan be prepared by using a living free radical polymerization processemploying an appropriately functionalized AIBN initiator and2,2,6,6-tetramethylpiperdinyloxy. Removal of the t-butoxycarbonylprotecting group leads to monoamino-terminated poly(styrene). Theporogen polymer may also be end-functionalized with a Diels-Alderdienophile such as maleimide, acryloyl chloride, cinnamic acid or thelike.

3. The Coupling Agent

The coupling agent which links the porogen to the host polymer in thefirst step of the present method is a compound having one or morefunctional group at each terminus, the first functional group capable ofcovalently binding to the reactive site of the porogen, and the secondfunctional group capable of covalently binding to the host polymer.Thus, the molecular structure of the coupling agent may be representedas R¹—L—R² wherein R¹ is a functional group that enables covalentbinding to the reactive site of the porogen, L is a hydrocarbylenelinker containing at least two carbon atoms, and R² is a functionalgroup that enables covalent binding to the host polymer.

As explained in the preceding section, the coupling agent may bind tothe porogen via any chemical mechanism that results in covalentattachment. For coupling to porogens which contain nucleophilic sites,R¹ is a functional group, e.g., an isocyanate, a ketene, cyano, an iminoether, a carbodiimide, an aldehyde, a ketone, or the like, that enablescovalent binding to a nucleophilic moiety. Conversely, R¹ may itself bea nucleophilic moiety and the reactive site of the porogen may be anisocyanate, a ketene, cyano, or the like.

R² is selected to enable covalent attachment to the host polymer. Forpolymers containing free OH or COOH moieties, then, R² will be a groupthat enables covalent binding to molecular moieties containing hydroxylor carboxyl groups, e.g., terminal Si—OH moieties in silsesquioxanes andother siloxane polymers. Preferred R² moieties, when the host polymer isa silicon containing polymer such as a silsesquioxane, have thestructural formula —SiX₃ wherein the X substituents may be the same ordifferent, and either leaving groups or inert hydrocarbyl moieties, withthe proviso that at least one of the X substituents must be a leavinggroup. Typically, the leaving groups are hydrolyzable so as to form asilanol linkage with a hydroxyl group present on the host polymer.Examples of suitable leaving groups include, but are not limited to,halogen atoms, particularly chloro, and alkoxy moieties, particularlylower alkoxy moieties. When all three X substituents are leaving groups,then, the moiety R² will then be, for example, trichlorosilyl,trimethoxysilyl, triethoxysilyl, or the like. If an inert hydrocarbylsubstituent is present, it is generally a lower alkyl group, e.g.,methyl, ethyl, isopropyl, n-propyl, t-butyl, etc. Thus, R² may also bediisopropylchlorosilyl, dimethylchlorosilyl, ethyldichlorosilyl,methylethylchlorosilyl, or the like. Other R² moieties will beappropriate for other host polymers, as will be appreciated by thoseskilled in the art. For example, when the host polymer ispoly(benzocyclobutene), R² is benzocyclobutene. Also, like R¹, R² mayalso be a functional group that enables covalent binding to anucleophilic moiety present on the host polymer; that is, R² may be, forexample, an isocyanate, a ketene, cyano, an imino ether, a carbodiimide,an aldehyde, a ketone, or the like. Conversely, as with R¹, R² may be anucleophilic moiety and the reactive site of the host polymer may be anisocyanate, a ketene, cyano, or the like.

The linker L between R¹ and R² is hydrocarbylene, typically C₂-C₂₄hydrocarbylene, including, but not limited to, alkylene, arylene, andalkyl ether linkages, optionally substituted with one or more, typicallyone or two, lower alkyl, halogen, aryl, or other substituents.Particularly preferred L moieties are unsubstituted C₂-C₁₂ alkylenelinkages, with C₂-C₆ alkylene linkages most preferred, and n-propyleneand n-butylene being particularly optimal.

4. Crosslinking and Thermolysis

The crosslinking reaction is conducted in a suitable solvent as notedabove, generally a high boiling point solvent such asN-methylpyrrolidone, dimethylacetamide, dimethylformamide,dimethylphenyl urea, cyclohexanone, γ-butyrolactone, or the like, withall reagents present in predetermined amounts. The coupling agent andporogen are optimally present in an approximately 1:1 molar ratio, andthe solids content of the solution is typically about 10 wt. % to 60 wt.%, preferably about 30 wt. % to 40 wt. %. In order to effectcrosslinking, the reaction mixture is heated to a temperature in therange of approximately 150° C. to 250° C., typically in the range ofapproximately 200° C. to 250° C., for up to 2 hours, preferably up to 1hour, and most preferably up to about 30 minutes. The crosslinkingtemperature, or T_(C), must be below the decomposition temperature T_(D)of the porogen. Generally, although not necessarily, the reaction isconducted on a substrate, for example following deposition of thereaction mixture as a thin film on a substrate surface usingspin-coating or the like.

At this point in the process, after crosslinking, a polymeric matrix hasbeen synthesized in which the porogen is present as a discrete phasewithin a continuous phase comprised of the host polymer. The size of theporogen domains is generally less than about 20 nm in diameter,typically less than about 10 nm in diameter; the size of the domains isdue to controlled phase separation and is governed by the selection ofmaterials and processing conditions, as will be understood by those ofordinary skill in the art. The aforementioned polymeric matrixrepresents a novel composition of matter herein.

In the next step of the process, the polymeric matrix (whether or notpresent as a coating on a substrate surface) is heated to a temperaturewhich is at minimum equal to T_(D), the decomposition temperature of theporogen. The decomposition temperature, as alluded to earlier herein,will generally be at least about 300° C., but will be below the glasstransition temperature T_(g) of the host polymer. The porogen thusdecomposes to volatile fragments which diffuse out of the rigid hostmatrix, leaving voids behind. The pore size in the “foamed” or porousmaterial so prepared will generally correspond to the size of thedomains of the decomposable polymer (thus, pore size can be altered byvarying the molecular weight of the decomposable polymer).

The Novel Dielectric Material

The dielectric composition prepared using the methodology described inthe preceding section is thus a porous polymeric material with a numberof advantageous properties. The material has a dielectric constant ofless than 3.0, preferably less than 2.8, most preferably less than 2.5,at 25° C. In addition, the composition has closed cell pores generallyless than about 20 nm (i.e., less than about 200 Å), preferably lessthan about 10 nm (i.e., less than about 100 Å) in diameter, and a voidpercentage in the range of approximately 5% to 35%, resulting inenhanced mechanical toughness and crack resistance and improvedisotropic optical properties. The novel dielectric composition also hasa low thermal expansion coefficient at elevated temperatures (e.g., lessthan about 100 ppm, preferably less than about 40 ppm, more preferablyless than about 30 ppm), which assists in avoiding film cracking duringthermal processing. Further, the dielectric composition has mechanicalproperties that enable it to be chemically/mechanically planarized tofacilitate lithographic formation of multiple circuit levels inmultilevel integrated circuit devices. The dielectric composition isoptically clear and adheres well to substrates.

Integrated Circuit Devices

A primary use of the novel dielectric compositions is in the manufactureof electronic devices, particularly integrated circuit devices. Anintegrated circuit device according to the present invention isexemplified in FIG. 1, wherein the device is shown as comprisingsubstrate 2, metallic circuit lines 4, and a dielectric material 6 ofthe present invention. The substrate 2 has vertical metallic studs 8formed therein. The circuit lines function to distribute electricalsignals in the device and to provide power input to and signal outputfrom the device. Suitable integrated circuit devices generally comprisemultiple layers of circuit lines that are interconnected by verticalmetallic studs.

Suitable substrates 2 comprise silicon, silicon dioxide,silicon-germanium, glass, silicon nitride, ceramics, aluminum, copper,and gallium arsenide. Suitable circuit lines generally comprise ametallic, electrically conductive material such as copper, aluminum,tungsten, gold or silver, or alloys thereof. Optionally, the circuitlines may be coated with a metallic liner such as a layer of nickel,tantalum or chromium, or with other layers such as barrier or adhesionlayers (e.g., SiN, TiN, or the like).

The invention also relates to processes for manufacturing integratedcircuit devices containing a dielectric composition as described andclaimed herein. Referring to FIG. 2, the first step of one processembodiment involves disposing on a substrate 2 a layer 10 of anadmixture of (i) a porogen, (ii) a host polymer, (iii) a coupling agent,and (iv) a solvent (the solids content of the admixture is generally inthe range of about 10 wt. % to 60 wt. %, preferably about 40 wt. % to 50wt. %), all as described in detail earlier herein. The admixture isapplied to the substrate by art known methods such as spin or spraycoating or doctor blading. The film is heated to a temperature effectiveto crosslink the porogen and host polymer, followed by a further heatingstep to bring about thermal decomposition of the porogen and conversionof layer 10 to a dielectric composition of the invention.

Referring to FIG. 3, the third step of the process involveslithographically patterning the layer 10 of dielectric composition toform trenches 12 (depressions) therein. The trenches 12 shown in FIG. 3extend to the substrate 2 and to the metallic studs 8. Lithographicpatterning generally involves: (i) coating the layer 10 of thedielectric composition with a positive or negative photoresist such asthose marketed by Shipley or Hoechst Celanese, (AZ photoresist); (ii)imagewise exposing (through a mask) the photoresist to radiation such aselectromagnetic, e.g., UV or deep UV; (iii) developing the image in theresist, e.g., with suitable basic developer; and (iv) transferring theimage through the layer 10 of dielectric composition to the substrate 2with a suitable transfer technique such as reactive ion blanket or beametching (RIE). Suitable lithographic patterning techniques are wellknown to those skilled in the art such as disclosed in Introduction toMicrolithography, 2nd Ed., eds. Thompson et al. (Washington, D.C.:American Chemical Society, 1994).

Referring to FIG. 4, in the fourth step of the process for forming anintegrated circuit of the present invention, a metallic film 14 isdeposited onto the patterned dielectric layer 10. Preferred metallicmaterials include copper, tungsten, and aluminum. The metal is suitablydeposited onto the patterned dielectric layer by art-known techniquessuch as chemical vapor deposition (CVD), plasma-enhanced CVD, electroand electroless deposition (seed-catalyzed in situ reduction),sputtering, or the like.

Referring to FIG. 5, the last step of the process involves removal ofexcess metallic material by “planarizing” the metallic film 14 so thatthe film is generally level with the patterned dielectric layer 10.Planarization can be accomplished using chemical/mechanical polishing orselective wet or dry etching. Suitable methods for chemical/mechanicalpolishing are known to those skilled in the art.

Referring to FIGS. 6-8, there is shown an alternative process for makingan integrated circuit device of the invention. The first step of theprocess in this embodiment involves depositing a metallic film 16 onto asubstrate 18. Substrate 18 is also provided with vertical metallic studs20. Referring to FIG. 7, in the second step of the process, the metallicfilm is lithographically patterned through a mask to form trenches 22.Referring to FIG. 8, in the third step of the process, a layer 24 of areaction mixture comprising the porogen, the host polymer, the couplingagent, and the selected solvent is deposited onto the patterned metallicfilm 16. In the last step of the process, the mixture is heated tocrosslink the porogen and the host polymer, followed by heating to ahigher temperature effective to decompose the porogen. Optionally, thedielectric layer so provided may then be planarized, if necessary, forsubsequent processing in a multilayer integrated circuit.

The invention additionally relates to an integrated circuit packagingdevice (multichip module) for providing signal and power current to oneor more integrated circuit chips comprising: (i) a substrate havingelectrical conductor means for connection to a circuit board; (ii) aplurality of alternating electrically insulating and conducting layerspositioned on the substrate wherein at least of the layers comprises afilm of a dielectric material of the present invention; and (iii) aplurality of vias for electrically interconnecting the electricalconductor means, conducting layers and integrated circuit chips.

The integrated circuit packaging device represents an intermediate levelof packaging between the integrated circuit chip and the circuit board.The integrated circuit chips are mounted on the integrated circuitpackaging device which is in turn mounted on the circuit board.

The substrate of the packaging device is generally an inert substratesuch as glass, silicon or ceramic; suitable inert substrates alsoinclude epoxy composites, polyimides, phenolic polymers, hightemperature polymers, and the like. The substrate can optionally haveintegrated circuits disposed therein. The substrate is provided withelectrical conductor means such as input/output pins (I/O pins) forelectrically connecting the packaging device to the circuit board. Aplurality of electrically insulating and electrically conducting layers(layers having conductive circuits disposed in an dielectric insulatingmaterial) are alternatively stacked up on the substrate. The layers aregenerally formed on the substrate in a layer-by-layer process whereineach layer is formed in a separate process step.

The packaging device also comprises receiving means for receiving theintegrated circuit chips. Suitable receiving means include pinboards forreceipt of chip I/O pins or metal pads for solder connection to thechip. Generally, the packaging device also comprises a plurality ofelectrical vias generally vertically aligned to electricallyinterconnect the I/O pins, the conductive layers and integrated circuitchips disposed in the receiving means. The function, structure andmethod of manufacture of such integrated circuit packaging devices arewell known to those skilled in the art, as disclosed, for example inU.S. Pat. Nos. 4,489,364, 4,508,981, 4,628,411 and 4,811,082.

It is to be understood that while the invention has been described inconjunction with the preferred specific embodiments thereof, that theforegoing description as well as the examples which follow are intendedto illustrate and not limit the scope of the invention. Other aspects,advantages and modifications within the scope of the invention will beapparent to those skilled in the art to which the invention pertains.

All patents, patent applications, and publications mentioned herein arehereby incorporated by reference in their entireties.

EXPERIMENTAL

The following examples are put forth so as to provide those of ordinaryskill in the art with a complete disclosure and description of how toprepare and use the oligomers and polymers disclosed and claimed herein.Efforts have been made to ensure accuracy with respect to numbers (e.g.,quantities, temperature, etc.) but some errors and deviations should beaccounted for. Unless indicated otherwise, parts are parts by weight,temperature is in ° C. and pressure is at or near atmospheric.Additionally, all starting materials were obtained commercially orsynthesized using known procedures.

Example 1

Amino-terminated poly(methyl methacrylate) (Mn of 7-500), methylsilsesquioxane, and 1-isocyanato-3-trimethoxysilyl-propane (molar ratio1:7.5:1) are dissolved in dimethylphenylurea to provide a coatingsolution (45 wt. % solids content). The coating is cast by spin coatingonto silicon wafers to form films from 1 to 10 microns thick.Crosslinking is effected by heating the film for 1.5 hr at 200° C. Thetemperature is then increased to 350° C. to bring about decomposition ofthe porogen. The porous material that results has a dielectric constantof less than about 3.0 (at 25° C.).

Example 2

The process of Example 1 is repeated substituting amino-substitutedpolystyrene for amino-substituted poly(methyl methacrylate) as theporogen. Substantially the same results are expected.

Example 3

The process of Example 1 is repeated substituting amino-substitutedpoly(propylene oxide) for amino-substituted poly(methyl methacrylate) asthe porogen. Substantially the same results are expected.

Example 4

The process of Example 1 is repeated substituting poly(arylene) for thesilsesquioxane “host polymer,” and 4-(phenylethynyl)benzoyl chloride for1-isocyanato-3-trimethoxysilyl-propane as the coupling agent.Substantially the same results are expected.

Example 5

The process of Example 1 is repeated substituting polybenzocyclobutenefor the silsesquioxane “host polymer.” Substantially the same resultsare expected.

Example 6

The process of Example 1 is repeated substituting3-isocyanatopropylbenzoyclobutane for1-isocyanato-3-trimethoxysilyl-propane as coupling agent. Substantiallythe same results are expected.

Example 7

The process of Example 1 is repeated substituting1-cyano-3-trichlorosilyl-propane for1-isocyanato-3-trimethoxysilyl-propane as coupling agent. Substantiallythe same results are expected.

What is claimed is:
 1. A method for forming an integrated circuit,comprising: (a) depositing a metallic film on a substrate; (b)lithographically patterning the metallic film to provide a pattern ofindividual metallic circuit lines on the substrate; (c) preparing asolution of (i) a thermally labile porogen having a reactive site thatenables covalent attachment to another molecular moiety, (ii) athermally stable, low dielectric constant host polymer having a glasstransition temperature T_(g), and (iii) a coupling agent effective tocovalently bind to both the reactive site of the porogen and the hostpolymer, and depositing the solution around the metallic lines on thesubstrate; (d) heating the solution to a temperature T_(C) effective tocouple the porogen to the host polymer via the coupling agent, whereby apolymeric matrix is formed in which the porogen is present as a discretephase within a continuous phase formed by the host polymer; and (e)heating the polymeric matrix to a temperature T_(D) effective to degradethe porogen without affecting the host polymer, thereby producing adielectric material in the form of a porous structure, wherein T_(D) isgreater than T_(C) but less than T_(g).
 2. The method of claim 1,wherein the host polymer is silicon-containing.
 3. The method of claim2, wherein the host polymer is selected from the group consisting ofsilsesquioxanes, alkoxysilanes, organic silicates, orthosilicates, andcombinations thereof.
 4. The method of claim 3, wherein the host polymeris a silsesquioxane.
 5. The method of claim 4, wherein thesilsesquioxane is selected from the group consisting of hydrogensilsesquioxanes, alkyl silsesquioxanes, aryl silsesquioxanes, andderivatives and combinations thereof.
 6. The method of claim 5, whereinthe host polymer is selected from the group consisting of hydrogensilsesquioxanes, lower alkyl silsesquioxanes and phenyl silsesquioxanes.7. The method of claim 3, wherein the host polymer is a copolymer of apolyimide and a silsesquioxane.
 8. The method of claim 1, wherein thehost polymer is a polyimide.
 9. The method of claim 1, wherein the hostpolymer is a polybenzocyclobutene.
 10. The method of claim 1, whereinthe host polymer is a poly(arylene).
 11. The method of claim 1, whereinthe host polymer is a poly(arylene ether).
 12. The method of claim 1,wherein the pre-process molecular weight of the host polymer is in therange of approximately 750 to 100,000.
 13. The method of claim 1,wherein the porogen is a crosslinked nanoparticle with reactive surfacefunctionality.
 14. The method of claim 1, wherein the porogen comprisesa vinyl-based polymer.
 15. The method of claim 1, wherein the porogen isa polymer comprised of aliphatic polycarbonates, polyesters,polysulfones, polylactides, polylactones, and combinations thereof. 16.The method of claim 1, wherein the porogen is a polymer comprised ofmonomer units selected from the group consisting of styrene, halogenatedstyrene, hydroxy-substituted styrene, lower alkyl-substituted styrene,acrylic acid, acrylamide, methacrylic acid, methyl acrylate, ethylacrylate, butyl acrylate, ethylene oxide, propylene oxide, andcombinations thereof.
 17. The method of claim 16, wherein the porogen ispoly(methyl methacrylate).
 18. The method of claim 16, wherein theporogen is polystyrene.
 19. The method of claim 16, wherein the porogenis poly(propylene oxide).
 20. The method of claim 1, wherein thepolymeric matrix is comprised of porogen domains averaging less thanabout 20 nm in diameter.
 21. The method of claim 1, wherein the porogenrepresents in the range of about 5% to 35% of the polymeric matrix. 22.The method of claim 1, wherein the coupling agent has the formulaR¹—L—R² wherein R¹ is a functional group that enables covalent bindingto the reactive site of the porogen, L is a hydrocarbylene linkercontaining at least two carbon atoms, and R² is a functional group thatenables covalent binding to the host polymer.
 23. The method of claim22, wherein L is selected from the group consisting of alkylene, aryleneand alkyl ether linkages, optionally substituted with one or more loweralkyl, halogen or aryl substituents.
 24. The method of claim 23, whereinL is alkylene.
 25. The method of claim 24, wherein L is C₂-C₁₂ alkylene.26. The method of claim 25, wherein L is C₂-C₆ alkylene.
 27. The methodof claim 26, wherein L is n-propylene or n-butylene.
 28. The method ofclaim 23, wherein L is arylene.
 29. The method of claim 23, wherein L isan alkyl ether linkage.
 30. The method of claim 22, wherein the reactivesite of the porogen and the R¹ functional group are mutually reactivegroups.
 31. The method of claim 30, wherein the reactive site of theporogen is a hydroxyl or amino group, and R¹ is selected from the groupconsisting of an isocyanate, a ketene, cyano, an imino ether, acarbodiimide, an aldehyde and a ketone.
 32. The method of claim 22,wherein the host polymer is a silsesquioxane and R² is —SiX₃ wherein atleast one X is a leaving group.
 33. The method of claim 32, wherein allthree X moieties are leaving groups.
 34. The method of claim 33, whereineach X is lower alkoxy or halo.